copyright@ apollo electron co.,ltd. , all rights reserved. absolute maximum ratings ( tj = 25c unless otherwise specifed ) symbol parameter condition ratings units v drm repetitive peak off-state voltage since wave, 50 to 60hz 6 00 v i t(rms) r.m.s on-state current t j = 125 c, full sine wave 4.0 a i tsm surge on-state current one cycle, 50hz/60hz, peak, non-repetitive 25/27 a i 2 t i 2 t tp= 10ms 3.1 a 2 s p g(av) average gate power dissipation tj = 125 c 0.5 w pgm peak gate power dissipation tj=125c 5 w i gm peak gate current tj = 125 c 2 a t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c sensitive gate triac features repetitive peak off-state voltage : 600v r.m.s on-state current ( i t(rms) = 4 a ) general description this device is suitable for direct coupling to ttl, htl, cmos and application such as various logic functions, low power ac switching applications, such as fan speed, small light controllers and home appliance equipment. 2.t2 3.gate 1.t1 symbol 1/6 t r4a60 s to- 1 2 3 apr, 2003. rev. 0 july, 2010. rev. 2 this device may substitute for z0405mf, 2n6075, BT134-600 series.
electrical characteristics symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v d = v drm , single phase, half wave tj = 125 c --- --- 2.0 ma v tm peak on-state voltage itm = 5.5a, tp=380? -- -- 1.7 v i + gt1 gate trigger current v d = 12 v, r l =30 5 ma i - gt1 - 5 i - gt3 - 5 i + gt4 , 9 10 ? ? ? ? ?? ? ? ??? v + gt1 gate trigger voltage v d = 12 v, r l =30 --- --- 1.5 v --- --- 1.5 v - gt1 v - gt3 1.5 v + gt4 iv --- --- 1.5 v gd non-trigger gate voltage t j = 125 c, v d =vdrm rl=3.3k 0.25 --- v dv/dt critical rate of rise off-state voltage t j = 125 c, v d =2/3 v drm 20 v/ ? i h holding current it=0.1a --- --- 10 ma tr4a60 2/6
-50 0 50 100 150 0.1 1 10 v gt (t o c) v gt (25 o c) junction temperature [ o c] 10 0 10 1 10 2 10 3 0 5 10 15 20 25 30 35 60hz 50hz surge on-state current [a] time (cycles) 012345 100 110 120 130 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o allowable case temperature [ o c] rms on-state current [a] 012345 0 1 2 3 4 5 6 7 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o power dissipation [w] rms on-state current [a] 0.5 1.0 1.5 2.0 2.5 3.0 10 -1 10 0 10 1 10 2 125 o c 25 o c on-state current [a] on-state voltage [v] 10 1 10 2 10 3 10 -1 10 0 10 1 25 p g(av) = 0.5w p gk = 5w i gm =2a v gk = 5v v gd = 0.2v gate voltage [v] gate current [ma] tr4a60 s 3/6 fig 1. gate characteristics fig 2. on-state voltage fig 3. on state current vs. maximum power dissipation fig 4. on state current vs. allowable case temperature fig 5. surge on-sta te current rating ( non-repetitive ) fig 6. gate trigger voltage vs. junction temperature 2 360 : conduction angle 2 360 : conduction angle
4/6 tr4a60 s fig 8. transient thermal impedance fig 7. gate trigger current vs. junction temperature -50 0 50 100 150 0.1 1 10 i + gt3 i + gt1 i - gt1 i - gt3 i gt (t o c) i gt (25 o c) junction temperature [ o c] 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 transient thermal impedance [ o c/w] time (sec)
dim. mm inch min. typ. max. min. typ. max. a 7.5 7.9 0.295 0.311 b 10.8 11.2 0.425 0.441 c 14.2 14.7 0.559 0.579 d 2.7 2.9 0.106 0.114 e 3.8 0.150 f 2.5 0.098 g 1.2 1.5 0.047 0.059 h 2.3 0.091 i 4.6 0.181 j 0.48 0.62 0.019 0.024 k 0.7 0.86 0.028 0.034 l 1.4 0.055 3.2 0.126 5/6 tr4a60 s 1. t1 2. t2 3. gate a b c d e f g 1 2 3 h i j k l to-126 package dimension
dim. mm inch min. typ. max. min. typ. max. a 7.5 7.9 0.295 0.311 b 10.8 11.2 0.425 0.441 c 14.2 14.7 0.559 0.579 d 2.7 2.9 0.106 0.114 e 3.8 0.150 f 2.5 0.098 g 1.2 1.5 0.047 0.059 h 2.3 0.091 i 4.6 0.181 j 0.48 0.62 0.019 0.024 k 0.7 0.86 0.028 0.034 l 1.4 0.055 m 5.0 0.197 3.2 0.126 tr4a60 s to-126 package dimension, forming 6/6 1. gate 2. t2 3. t1 a b c d e f g 3 2 1 h i j k l m
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